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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1703K DESCRIPTION *High DC current gain *Collector-Emitter Breakdown VoltageV(BR)CEO= -100V(Min) *Complement to type PMD1603K APPLICATIONS *Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL VCBO VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE -100 UNIT V Collector Current -Continuous Collector Current-Peak Base Current ww w PARAMETER scs .i -100 -5.0 -20 -40 -0.5 180 150 -65~200 .cn mi e V V A A A PC Tj Tstg Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature W THERMAL CHARACTERISTICS SYMBOL Rth j-c MAX 0.97 UNIT /W ThermalResistance, Junction to Case isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS PMD1703K MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA; IB= 0 -100 V V(BR)CER Collector-Emitter Breakdown Voltage IC= -100mA; RBE= 2.2k -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -10A; IB= -40mA -2.8 V VBE(on) Base-Emitter On Voltage IC= -10A; VCE= -3V -2.8 V ICER Collector Cutoff current VCE= -100V; RBE= 2.2K IEBO Emitter Cut-off current hFE DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance w w scs .i w VEB= -5V; IC= 0 IC= -10A; VCE= -3V .cn mi e -7.0 mA -3.0 mA 750 20000 IC= -7A; VCE= -3V, f= 1kHz 4 MHz IE= 0; VCB= -10V; ftest= 1.0MHz 400 pF isc Websitewww.iscsemi.cn 2 |
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